| 摘要 |
A polishing pad for electrolytically polishing an interconnect material of a device wafer by applying a direct-current voltage to the interconnect material as an anode and a cathode as a counter electrode while causing an electrolyte to come in contact with the anode and the cathode, the polishing pad includes a plurality of electrolytic cells formed by the anode, the cathode, and the electrolyte and having a contact surface smaller than the device wafer, the electrolytic cells being moved relative to the interconnect material when electrolytically polishing the interconnect material on the device wafer. The polishing pad includes an insulating member having a plurality of openings, a conductive top layer provided on the insulating member and having a plurality of openings communicating with the openings in the insulating member, and a conductive sheet formed on the insulating member on a side opposite to the conductive top layer, wherein the electrolyte reception section is formed by the opening in the insulating member and the opening in the conductive top layer.
|
