NONVOLATILE MEMORY DEVICE CAPABLE OF CHANGING INCREMENT OF PROGRAM VOLTAGE ACCORDING TO OPERATION MODE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of changing the increment of a program voltage according to the operation mode.

SOLUTION: The nonvolatile memory device includes a word line voltage generator circuit for generating a word line voltage to be supplied to a selected row in response to step control signals and a program controller for sequentially activating the step control signals during a program cycle. During the program cycle, the word line voltage generator circuit controls the increment of the word line voltage differently according to the operation mode.

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