| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having a barrier metal film having a low resistance and high adhesiveness between insulating film and wirings, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes the insulating film 6 formed on a silicon substrate 1, embedded wiring 10 formed in the insulating film 6, and the barrier metal film A1, formed between the insulating film 6 and the embedded wiring 10. The barrier metal film A1 is made of a metal compound film 7 and a metal film 9 which does not lose conductivity even by oxidation. A fusion layer 8, in which the metal compound film 7 and the metal film 9 are united, exists near a junction surface between the metal compound film 7 and the metal film 9. COPYRIGHT: (C)2006,JPO&NCIPI
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