| 摘要 |
PROBLEM TO BE SOLVED: To appropriately perform CMP without generating dishing, or the like even if performing CMP in the manufacturing process of a semiconductor device in an STI structure. SOLUTION: The semiconductor device in the STI structure is manufactured by including a first film-formation process for film-forming a first oxide film 3 on a substrate 1 in which a trench 2 is formed; a second film-formation process for burying the trench 2 by film-forming a second oxide film 4 on the substrate 1 in which the first oxide film 3 is formed; a first polishing process for exposing the first oxide film 3 at a part other than the formation location of the trench 2 by performing polishing under conditions corresponding to the second oxide film 4; and a second polishing process for performing polishing under conditions corresponding to the first oxide film 3, exposing the substrate 1 at a part other than the formation location of the trench 2, and flattening the exposure surface. COPYRIGHT: (C)2006,JPO&NCIPI
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