发明名称 SYNCHRONOUS SEMICONDUCTOR MEMORY APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an SDRAM in which bit constitution can be switched and area penalty is reduced. SOLUTION: This apparatus is provided with a selector 116a in which a two bits serial data signal from one side of a data input/output terminal 112 is supplied to two pairs of input/output lines 121a, 122a as a parallel data signal in a×8 constitution mode, and two bit parallel data from both data input/output terminals 112, 113 are supplied to two pairs of input/ouput lines 121a, 122a as it is in×16 constitution mode. The apparatus becomes a two bit pre-fetch system in the×8 constitution mode, and becomes a single pipeline system in the×16 constitution mode. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005346922(A) 申请公布日期 2005.12.15
申请号 JP20050253760 申请日期 2005.09.01
申请人 RENESAS TECHNOLOGY CORP 发明人 IWAMOTO HISASHI;KONISHI YASUHIRO
分类号 G11C11/409;G11C11/407;(IPC1-7):G11C11/409 主分类号 G11C11/409
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