WAFER TRAY, WAFER BURN-IN UNIT, WAFER-LEVEL BURN-IN APPARATUS USING SAME UNIT, AND TEMPERATURE CONTROLLING METHOD OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To subject a plurality of semiconductor devices formed on a wafer to a burn-in test under a uniform-temperature condition and in a lump as the wafer, while suppressing the variations of the self-heat-generation distribution of the wafer which are caused by faulty chips. SOLUTION: A wafer tray 4 comprises a wafer chuck 1 and a uniformly heating wafer 2. When performing a burn-in test, a semiconductor wafer 3 is so held that the rear surface of the semiconductor wafer 3 is contacted oppositely with the rear surface of the uniformly heating wafer 2. On the principal surface of the uniformly heating wafer 2, a plurality of uniformly heating devices 5 each of which comprises a temperature sensor and a heat generating body are formed in the form of a grid, and the temperature distribution generated in the surface of the held semiconductor wafer 3 can be measured particularly. Further, the semiconductor wafer 3 can be heated locally. Consequently, since the temperature generated in the surface of the semiconductor wafer 3 can be made uniform, a wafer-level burn-in test can be performed under a uniform temperature condition. COPYRIGHT: (C)2006,JPO&NCIPI