| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a nitride semiconductor device which has contact resistance of an n-type electrode of low value not acquired by dry etching using only chlorine gas, even if thermal treatment of at least 400°C is not performed. <P>SOLUTION: The nitride semiconductor device is manufactured by using a process for forming a nitride semiconductor layer on the main surface of a GaN substrate, a process for polishing a back of the GaN substrate on which the nitride semiconductor layer was formed, a process wherein dry etching of the polished back of the GaN substrate is performed by using mixed gas of chlorine and oxygen, and a process for forming the n-type electrode on the back of the GaN substrate in which dry etching was performed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
