发明名称 |
Metal-filled openings for submicron devices and methods of manufacture thereof |
摘要 |
A method of forming a metal-filled opening in a semiconductor or other submicron device substrate includes forming a conductive bulk layer over the substrate surface and in the opening, wherein the conductive bulk layer has a first grain size. A conductive cap layer is formed over the conductive bulk layer, the conductive cap layer having a second grain size that is substantially smaller than the first grain size. At least one of the conductive bulk and cap layers are then planarized to form a planar surface that is substantially coincident with the substrate surface.
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申请公布号 |
US2005275941(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040854061 |
申请日期 |
2004.05.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU CHI-WEN;TSAO JUNG-CHIH;CHANG SHIH-TZUNG;WANG YING-LANG;CHEN KEI-WEI |
分类号 |
G02B23/00;H01L21/768;H01L21/82;(IPC1-7):H01L21/82 |
主分类号 |
G02B23/00 |
代理机构 |
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代理人 |
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地址 |
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