A THRESHOLD VOLTAGE STABILIZER, METHOD OF MANUFACTURING AND INTEGRATED CIRCUIT EMPLOYING THE SAME

摘要

The present invention provides a threshold voltage stabilizer for use with a MOS transistor (100) having a body effect associated therewith. In one embodiment, the threshold voltage stabilizer, includes a body well (110) located in a substrate (105), a source (115) located in the body well (110), and a stabilization region (130) positioned below the body well. The threshold voltage stabilizer is configured to provide a stabilization voltage to the stabilization region (130) to increase a depletion region (145) within the body well and thereby restrict the body effect to stabilize a threshold voltage of the MOS transistor.