| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To save the labor of a photoelectric cell connection and obtain a light receiving electric power of high efficiency-output by integrating a plurality of photoelectric units each having high sensitivity to infrared rays on a glass substrate to output a high voltage. <P>SOLUTION: The thickness of three layers of a 8N type (or 6P type) polycrystalline layer, a 7I type silicon polycrystalline layer and a 6P type (or 8N type) polycrystalline layer is set to the thickness that effectively absorbs infrared rays (λ= about 700 to 1,000 nm) to form the photoelectric cell unit having high sensitivity to the infrared rays. A plurality of the photoelectric cell units are integrated on a sheet of glass substrate to configure a one-tip photoelectric cell. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
