CMOS IMAGE ELEMENT WITH IMPROVED FILL FACTOR

摘要

PROBLEM TO BE SOLVED: To provide a CMOS element with an improved fill factor. SOLUTION: The CMOS image element includes a semiconductor substrate including an element isolation region and an active region, plural gate electrodes formed at predetermined portions in the active region, and a gate electrode contact for transferring external signals to a predetermined portion in the active region, and the gate electrode contact overlaps the active region. COPYRIGHT: (C)2006,JPO&NCIPI