| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-speed small-dimension heterobipolar transistor free from short circuit, and a manufacturing method therefor. SOLUTION: A transistor comprises: a first compound semiconductor composition layer which is doped to have a first charge carrier polarity; a second compound semiconductor composition layer which is doped to have a second charge carrier polarity and is provided on the first layer; a third compound semiconductor composition layer which is doped to have the first charge carrier polarity and is provided on the second layer; a base electrode on the second layer; and a spacer ring which is interposed between the base electrode and the third layer and defines a charge carrier access path distance, within a range from approximately 200Åto approximately 1000Å, between the base electrode and the third layer. COPYRIGHT: (C)2006,JPO&NCIPI
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