发明名称 SUBSTRATE PROCESSOR
摘要 PROBLEM TO BE SOLVED: To provide a substrate processor that accurately controls the temperature of a semiconductor substrate and forms a film, having an accurate thickness on the semiconductor substrate. SOLUTION: A control program corrects an interference matrix using the least square method or exponentially-weighted recurrence least-square algorithm. The control program corrects the interference matrix using variation U of a temperature setting value and variation Y of a temperature measurement value by temperature control of a control computer. The newly calculated interference matrix is stored in the matrix DB, and used for next or later temperature control. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005347687(A) 申请公布日期 2005.12.15
申请号 JP20040168453 申请日期 2004.06.07
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YAMAGUCHI HIDETO
分类号 C23C16/52;G05B13/02;H01L21/205;H01L21/31;(IPC1-7):H01L21/205 主分类号 C23C16/52
代理机构 代理人
主权项
地址
您可能感兴趣的专利