| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a SiC<SB>x</SB>N<SB>y</SB>thin film for controlling (x) and (y) of three element composition SiC<SB>x</SB>N<SB>y</SB>of Si, C and N and safely forming it not only on a high melting point material but also on an organic compound without danger of explosion at a low temperature. SOLUTION: A gas inflow port is installed in a reaction chamber lower part, a substrate at an upper part and a tungsten catalyst object heated to 1,600°C in a middle part. Mixed gas of hexamethyldisilazane, ammonia, and hydrogen, which is introduced from the gas inflow port, is decomposed by the tungsten catalyst object. A recomposed chemical species reacts on a substrate surface and a SiC<SB>x</SB>N<SB>y</SB>thin film is formed. SiC<SB>x</SB>N<SB>y</SB>thin film composition is controllable by changing composition of mixed gas and a substrate temperature. The organic compound such as acrylic resin at a low melting point, which does not contain Si, teflon and polyester can be used as the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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