| 摘要 |
PROBLEM TO BE SOLVED: To reduce time until deciding a heat treatment condition that the electric characteristic of a semiconductor element after heat treatment reaches prescribed performance. SOLUTION: This method comprises a heat treatment step of locally heat-treating one of a plurality of semiconductor elements formed on a wafer using a local heater in a measurement instrument, a step of measuring the electric characteristic of the semiconductor element heat-treated locally in the measurement instrument, a step of performing the heat treatment step and the measurement step by varying the condition of heat treatment about the other semiconductor elements of the plurality of semiconductor elements when the measured electric characteristic of the semiconductor element has not reached desired performance yet, and a step of deciding the condition of heat treatment performed to the semiconductor element as a desired heat treatment condition when the measured electric characteristic of the semiconductor element has reached desired performance. COPYRIGHT: (C)2006,JPO&NCIPI
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