发明名称 GRINDING METHOD FOR PERIPHERAL EDGE PORTION OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a grinding method for the peripheral edge of a semiconductor wafer whereby the quality of the peripheral edge of the semiconductor wafer can be made high and its grinding time can be made short. SOLUTION: With respect to the grinding method for the peripheral edge of a semiconductor wafer, the grinding is so performed as to separate a grinding cloth from the wafer properly in the course of the process for grinding the peripheral edge of the wafer, by contacting pressingly the rotated grinding cloth with the peripheral edge of the rotated semiconductor wafer. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005347613(A) 申请公布日期 2005.12.15
申请号 JP20040167011 申请日期 2004.06.04
申请人 TOSHIBA CERAMICS CO LTD 发明人 KUHARA KATSUMI
分类号 B24B9/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B9/00
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