| 摘要 |
PROBLEM TO BE SOLVED: To subminiaturize a metal-using gate electrode. SOLUTION: An n-channel MISFET Q<SB>1</SB>and a p-channel MISFET Q<SB>2</SB>are formed on a semiconductor substrate 1. A gate electrode 9a is formed on the gate insulating film 5 of the n-channel MISFET Q<SB>1</SB>. The gate electrode 9a is constituted of a tantalum nitride film 6 formed directly on the gate insulating film 5 and a hafnium film 26 formed on the tantalum nitride film 6. The gate length is subminiaturized by utilizing the easy processability of the tantalum nitride film 6, and the threshold voltage is adjusted by using the hafnium film 26. Similarly, the gate electrode 9b of the p-channel MISFET Q<SB>2</SB>is formed into the laminated structure of a tantalum nitride film 6 and a platinum film 29. COPYRIGHT: (C)2006,JPO&NCIPI
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