| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device wherein a gate has a laminated structure and a diffusion can be formed of a source, a drain in a self-alignment manner, and an element isolation area is omitted, and which is suitable for shrinkage. SOLUTION: In the nonvolatile semiconductor memory device, a plurality of first gate electrodes 1 are arranged parallel to each other on a semiconductor substrate with an insulating film 4 in-between, and while the first gate 1 is used as a mask, a plurality of sources 2 and drains 3 are alternately formed as diffusion areas in a self-alignment manner. A plurality of second gate electrodes 7 are arranged on the first gate electrodes 1 with an insulating film 6 so that they may orthogonally cross the first electrodes 1, and the second gate electrode 7 is used as a control gate, thus forming a channel 12 between the source 2 and the drain 3. COPYRIGHT: (C)2006,JPO&NCIPI
|
