| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated-gate semiconductor device which can be controlled for gate capacitance and short-circuit current and can be suppressed in the variation in threshold voltages in the form of a CSTBT. SOLUTION: The CSTBT is formed between a p base region (104) and a semiconductor substrate (103), and contains a carrier accumulation layer (113) having a higher dopant concentration than the semiconductor substrate (103). In the CSTBT, the p base region (104) in the periphery of a gate electrode (110) works as a channel, and the carrier accumulation layer (113) satisfies a relationship of ND1<ND2, where ND1 is the dopant concentration of a carrier accumulation layer region immediately below the channel (113a), and ND2 is the dopant concentration in other part (113b) of the carrier accumulation layer region than the part immediately below the channel. COPYRIGHT: (C)2006,JPO&NCIPI
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