发明名称 |
METHOD FOR GROWING AlN CRYSTAL, AlN CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing an AlN crystal whereby a large AlN crystal can be obtained, an AlN crystal substrate and a semiconductor device containing the AlN crystal substrate. SOLUTION: In the method for growing the AlN crystal 2, the AlN crystal is grown through a sublimation method by using a first AlN seed crystal 1 grown through an HVPE method. In an alternative method for growing the AlN crystal, the AlN crystal 2 is grown through the sublimation method by using a second AlN seed crystal 1 as a seed crystal, wherein the second AlN seed crystal 1 is at least a portion of the AlN crystal 2 obtained through the method for growing the AlN crystal. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005343722(A) |
申请公布日期 |
2005.12.15 |
申请号 |
JP20040163500 |
申请日期 |
2004.06.01 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
FUJIWARA SHINSUKE;MIYANAGA TOMOMASA;SHIMAZU MITSURU |
分类号 |
C30B29/38;C30B25/18;(IPC1-7):C30B29/38 |
主分类号 |
C30B29/38 |
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