| 摘要 |
A dummy capacitor drive potential VDC is given to one electrode of a dummy capacitor, and a reference potential for determining a data value of a memory cell is generated in the other electrode thereof. A potential generator circuit for generating the potential VDC is composed of a BGR circuit outputting a potential VBGRTEMP having temperature dependency, and resistors R 3 and R 4 , which are series-connected between an output terminal of the BGR circuit and a ground point. The potential VDC is output from a connection point of the resistors R 3 and R 4 . Temperature dependency of the potential VDC is adjusted based on a resistance ratio of resistors R 1 - 1 , R 1 - 2 and R 2 , and the absolute value is adjusted based on a resistance ratio of resistors R 3 and R 4.
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