发明名称 |
Amorphus TiN |
摘要 |
A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH<SUB>3 </SUB>on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (~0.4 at %) and trace levels of incorporated Si (0.01<Si<0.5 at %).
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申请公布号 |
US2005275101(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20050143953 |
申请日期 |
2005.06.03 |
申请人 |
BURGESS STEPHEN R;PRICE ANDREW;RIMMER NICHOLAS;MACNEIL JOHN |
发明人 |
BURGESS STEPHEN R.;PRICE ANDREW;RIMMER NICHOLAS;MACNEIL JOHN |
分类号 |
C23C16/34;H01L21/285;H01L21/4763;H01L21/768;H01L23/52;(IPC1-7):H01L23/52;H01L21/476 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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