发明名称 |
System and method to reduce noise in a substrate |
摘要 |
Disclosed herein is a system adapted to reduce noise in a substrate of a chip. The chip may include a substrate having a first well disposed there atop. The first well may be a deep well. A second well and a third may also be disposed within the first well. A first transistor may be disposed in the second well. A quiet voltage source may be connected to a body of the first transistor. A second transistor may be disposed in the third well. The first transistor may be a PMOS transistor and the second transistor may be an NMOS transistor. A noisy voltage source may be coupled to a source of the first transistor. A body of the first transistor may be resistively coupled to the second well.
|
申请公布号 |
US2005275066(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040988058 |
申请日期 |
2004.11.12 |
申请人 |
FUJIMORI ICHIRO |
发明人 |
FUJIMORI ICHIRO |
分类号 |
H01L21/00;H01L21/22;H01L21/76;H01L21/761;H01L21/8238;H01L27/092;H01L29/167;(IPC1-7):H01L29/167 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|