发明名称 System and method to reduce noise in a substrate
摘要 Disclosed herein is a system adapted to reduce noise in a substrate of a chip. The chip may include a substrate having a first well disposed there atop. The first well may be a deep well. A second well and a third may also be disposed within the first well. A first transistor may be disposed in the second well. A quiet voltage source may be connected to a body of the first transistor. A second transistor may be disposed in the third well. The first transistor may be a PMOS transistor and the second transistor may be an NMOS transistor. A noisy voltage source may be coupled to a source of the first transistor. A body of the first transistor may be resistively coupled to the second well.
申请公布号 US2005275066(A1) 申请公布日期 2005.12.15
申请号 US20040988058 申请日期 2004.11.12
申请人 FUJIMORI ICHIRO 发明人 FUJIMORI ICHIRO
分类号 H01L21/00;H01L21/22;H01L21/76;H01L21/761;H01L21/8238;H01L27/092;H01L29/167;(IPC1-7):H01L29/167 主分类号 H01L21/00
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