发明名称 |
Thin film transistor and method of fabricating the same |
摘要 |
A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second capping layer pattern sequentially formed on the metal catalyst layer. The method includes: forming a first capping layer on a metal catalyst layer; forming and patterning a second capping layer on the first capping layer; forming an amorphous silicon layer on the patterned second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. The crystallization catalyst diffuses at a uniform low concentration to control a position of a seed formed of the catalyst such that a channel region in the polysilicon layer is close to a single crystal. Therefore, the characteristics of the thin film transistor device may be improved and uniformed.
|
申请公布号 |
US2005275019(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040019459 |
申请日期 |
2004.12.23 |
申请人 |
SEO JIN-WOOK;LEE KI-YONG;YANG TAE-HOON;PARK BYOUNG-KEON |
发明人 |
SEO JIN-WOOK;LEE KI-YONG;YANG TAE-HOON;PARK BYOUNG-KEON |
分类号 |
H01L21/00;H01L21/20;H01L21/336;H01L27/01;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|