| 发明名称 |
SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME |
| 摘要 |
<p>An interlayer insulation film (14) is formed to cover a dielectric capacitor and a contact hole (19) is so formed in the interlayer insulation film (14) as to reach an upper electrode (11a). An Al line (17) connected with the upper electrode (11a) through the contact hole (19) is formed on the interlayer insulation film (14). The contact hole (19) has an elliptical planar shape.</p> |
| 申请公布号 |
WO2005119780(A1) |
申请公布日期 |
2005.12.15 |
| 申请号 |
WO2004JP07817 |
申请日期 |
2004.06.04 |
| 申请人 |
FUJITSU LIMITED;NAGAI, KOUICHI |
发明人 |
NAGAI, KOUICHI |
| 分类号 |
H01L27/105;H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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