发明名称 PHOTOSENSITIVE MACROMOLECULAR RESIN AND CHEMICAL AMPLIFICATION-TYPE PHOTORESIST COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a photosensitive macromolecular resin capable of forming a thin circuit pattern even under an exposure light source having a short wavelength because of the excellent resolution; and to provide a chemical amplification-type photoresist composition including the resin. <P>SOLUTION: The photosensitive macromolecular resin has a repeating unit represented by the formula (wherein, R<SB>1</SB>is hydrogen; R<SB>2</SB>is hydrogen, a t-butoxy group, a carbonate group or a tetrahydropyranyloxy group; R<SB>3</SB>is chloro, bromo, hydroxy, cyano, t-butoxy, -CH<SB>2</SB>NH<SB>2</SB>, -CONH<SB>2</SB>, -CH=NH, -CH(OH)NH<SB>2</SB>or -C(OH)=NH; R<SB>4</SB>is hydrogen or a methyl group; and 1-x-y-z, x, y and z are proportions of polymerized repeating units constituting the photosensitive macromolecular resin, and x, y and z are each 0.01 to 0.8; and n is 1 or 2). <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005344115(A) 申请公布日期 2005.12.15
申请号 JP20050162908 申请日期 2005.06.02
申请人 DONGJIN SEMICHEM CO LTD 发明人 KIM DEOG-BAE;KIM SANG-JEOUNG;KIM HWA-YOUNG;JEGAL JIN;KIM JAE-HYUN
分类号 G03F7/004;C08F8/12;C08F212/14;G03C1/492;G03F7/039;H01L21/027 主分类号 G03F7/004
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