| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve exposure with high resolution by performing phase shift with high accuracy in a method for manufacturing a semiconductor device. <P>SOLUTION: The method for manufacturing a semiconductor device includes an exposure step of exposing a resist layer to linearly polarized light by using a phase shift mask 304 as a mask so as to form a circuit pattern of a semiconductor device. The phase shift mask 304 comprises a glass substrate 201 as a transparent substrate having a main surface and a light shielding body 202 formed to cover a part of the main surface of the glass substrate 201 with a desired pattern. The glass substrate 201 contains a phase shift portion 206 where a recess is formed on the main surface to reduce the thickness of the substrate 201. The light shielding body 202 has an eave portion 207 which protruding like an eave over the phase shift portion 206. The protruding length of the eave portion 207 is ≥0.2 times as the wavelength of the exposure light. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2005345960(A) |
申请公布日期 |
2005.12.15 |
| 申请号 |
JP20040168438 |
申请日期 |
2004.06.07 |
| 申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
TANAKA TOSHIHIKO;IMAI AKIRA |
| 分类号 |
G03F1/30;G03F1/68;H01L21/027;H01L21/3205;H01L21/336;H01L21/768;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G03F1/30 |
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