| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve overlap accuracy and/or combination accuracy when applying a scanning probe exposure device to device manufacturing of a semiconductor or the like. <P>SOLUTION: A scanning type probe exposure device aligns a probe 4 with an alignment mark 13 on a substrate 1, and causes a tunnel current flow or discharges an electric field from the probe to a resist on the substrate while scanning the prove relatively to the substrate so as to perform patterning on the resist. In the exposure device, there are provided means 9, 12 for forming ruggedness for alignment in a predetermined positional relationship with the alignment mark over the resist on the substrate, a means 6 for detecting the ruggedness based on the action of the probe when the probe is moved relatively along with the surface of the resist, and a means for performing the alignment based on a result of the detection. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
