METHOD OF MANUFACTURING MIS COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-performance and high-reliability MIS semiconductor device by reducing slow traps in a gate insulation film. SOLUTION: The MIS compound semiconductor device is manufactured by forming an AlN film (gate insulation film) 103 consisting of a nitride of a group-III element by ECR sputtering on a substrate 101 equipped with a semiconductor epitaxial layer (semiconductor layer) 102 consisting of an InP compound semiconductor. The formed gate insulation film 103 is heat-treated in a gas atmosphere 111 containing a hydrogen gas. COPYRIGHT: (C)2006,JPO&NCIPI