| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device which has a large aperture area and a superior photoelectric conversion ratio, and suppresses the occurrence of smears. SOLUTION: According to the solid state imaging device, a 100-200 mn thick, shading film 10 made of tungsten or the like is grown uniformly using a sputtering method, an organic metal CVD method, etc. so as to surround a charge transfer electrode 5. The shading film 10 is then etched anisotropically until the shading film part 10b at the side wall of the charge transfer electrode 5 comes to have a film thickness of 100-200 nm. The process gives the shading film 10 such a shape that the shading film part 10a on the charge transfer electrode 5 and the shading film part 10b at the side wall of the charge transfer electrode 5 are not separate but continuous, and the thickness of the shading film part 10b at the side wall of the charge transfer electrode 5 increase as the shading film part 10b approaches the bottom of the charge transfer electrode 5. COPYRIGHT: (C)2006,JPO&NCIPI
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