发明名称 |
Non-volatile semiconductor memory device |
摘要 |
A switch section connects a first wire line aSL to the gate of a first memory transistor 1 and the source of a second memory transistor 2 and a second wire line bSL to the source of the first memory transistor 1 and the gate of the second memory transistor 2 when first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistor 1 and the gate of the second memory transistor 2 and the second wire line bSL to the gate of the first memory transistor 1 and the source of the second memory transistor 2 when second type data is to be written into a memory cell.
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申请公布号 |
US2005276103(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20050143581 |
申请日期 |
2005.06.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KATO JUNICHI;NAKAYAMA MASAYOSHI;OZEKI TAKAO;MIYOSHI ASAKO;HATAKEYAMA SHINICHI |
分类号 |
G11C11/34;G11C14/00;G11C16/04;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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