发明名称 |
Method for forming self-aligned contact in semiconductor device |
摘要 |
A method for forming a self-aligned contact on a semiconductor substrate provided with a plurality of field-effect transistors. The method comprises the steps of: forming a thin nitride insulating layer on a gate structure and a diffusion region of the transistor; forming a first insulating layer, which is then planarized to expose the nitride insulating layer on the gate structure; etching through the first insulating layer to form a first part of a contact hole; forming a first part of a contact in said first part of the contact hole; forming a second insulating layer; etching through the second insulating layer to form a second part of the contact hole; and forming a second part of the contact in the second part of the contact hole. The two-stage etching process for forming a conductive contact effectively prevents over-etching and short-circuiting between a wordline and a bitline. |
申请公布号 |
US2005277258(A1) |
申请公布日期 |
2005.12.15 |
申请号 |
US20040940707 |
申请日期 |
2004.09.15 |
申请人 |
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发明人 |
HUANG TSE-YAO;WU KUO-CHIEN;CHEN YI-NAN |
分类号 |
H01L21/02;H01L21/60;H01L21/8234;H01L21/8238;H01L21/8239;H01L27/10;H01L27/105;(IPC1-7):H01L27/10 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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