发明名称 |
Optically pumped semiconductor vertical cavity laser |
摘要 |
<p>The surface emitting semiconductor laser device has at least one monolithic integrated pump beam source (20). The source has at least one edge emitting semiconductor structure. This structure is suitable for the emission of electromagnetic radiation whose intensity profile transverse to the emission direction of the semiconductor structure follows a predetermined curve.</p> |
申请公布号 |
EP1605562(A2) |
申请公布日期 |
2005.12.14 |
申请号 |
EP20050006600 |
申请日期 |
2005.03.24 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
ALBRECHT, TONY;BRICK, PETER |
分类号 |
H01S3/0941;H01S5/026;H01S5/04;H01S5/18;H01S5/183;H01S5/34;H01S5/40;(IPC1-7):H01S5/026 |
主分类号 |
H01S3/0941 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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