Zener diode and method for fabricating the same

摘要

The present invention is directed to a Zener diode and a method for fabricating the same. According to the present invention, a voltage regulator device can be fabricated by carrying out a diffusion process without using a diffusion mask. Further, a PNP (or NPN) Zener diode having a bi-directional threshold voltage characteristic or a PN Zener diode can be fabricated without any photolithographic process or using the minimum number of processes. Therefore, the number of processing steps can be reduced and the yield thereof can be increased.