| 摘要 |
The invention relates to a semiconductor device ( 10 ) comprising a semiconductor body ( 11 ) in which an IC is formed and which has a number of connection regions ( 1 ) for the IC on its surface, including at least two connection regions ( 1 A) for a supply connection, the lower side of the semiconductor body ( 11 ) being provided with a number of further connection regions ( 2 ) which are connected to a connection region ( 1 ) by means of an electric connection ( 3 ) which is present on a side face of the semiconductor body ( 11 ) and electrically insulated therefrom, and the semiconductor body ( 11 ) being attached to a lead frame ( 4 ) and wire connections ( 5 ) being formed between leads ( 4 A) of the frame ( 4 ) and connection regions ( 1 ) . According to the invention, the electric connection ( 3 ) comprises a plurality of parallel, regularly spaced strip-shaped conductors ( 3 A), and the connection regions ( 1 A) for the supply connection are each connected with a further connection region ( 2 ) by means of two or more of said strip-shaped conductors ( 3 A), which further connection region is directly connected to a lead ( 4 B) of the frame ( 4 ) , while the remainder of the connection regions ( 1 B) are directly connected with leads ( 4 ) by means of the wire connections ( 5 ) . Such a device ( 10 ) has a very stable supply voltage and excellent high-frequency behavior, while the supply current may be extremely high. The invention further comprises a semiconductor body ( 11 ) suitable for use in such a device ( 10 ) and a method of manufacturing such a device ( 10 ). |
