发明名称 Integrated circuit photodetectors
摘要 <p>A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.</p>
申请公布号 GB0522758(D0) 申请公布日期 2005.12.14
申请号 GB20050022758 申请日期 2005.11.08
申请人 AGILENT TECHNOLOGIES, INC. 发明人
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
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