Method for manufacturing a SOI wafer

摘要

The invention relates to a method for manufacturing a material compound wafer, in particular a semiconductor on quartz type material compound wafer, comprising the steps of a) forming a predetermined splitting area in a source substrate, b) attaching the source substrate to a handle substrate to form a source-handle-compound and c) thermal annealing of the source-handle-compound for weakening of the predetermined splitting area and d) detachment of the source substrate at the predetermined splitting area by mechanical splitting. It has been observed that with the described process the final product quality was not constant so that production yield was relatively low and it is therefore the object of the present invention to further improve the process for manufacturing material compound wafers. This is achieved in that the source-handle-compound is brought to at a detachment temperature in step d) higher than room temperature at which a predetermined splitting area stays with essentially the same degree of weakening, and the mechanical splitting is performed at said temperature.