发明名称 |
Methods of forming shallow trench isolation |
摘要 |
A method of forming a shallow trench isolation is disclosed. An example method of forming a shallow trench isolation performs a planarization process for a substrate on which a hard mask and an insulation layer are formed, selectively etching the insulation layer on the edge of the substrate by using wet etch equipment, and performs a main etching process in the center region of the substrate.
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申请公布号 |
US6974756(B2) |
申请公布日期 |
2005.12.13 |
申请号 |
US20040021803 |
申请日期 |
2004.12.23 |
申请人 |
DONGBUANAM SEMICONDUCTOR, INC. |
发明人 |
YIM TERESA |
分类号 |
H01L21/311;H01L21/762;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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