发明名称 |
Field effect transistor with corner diffusions for reduced leakage |
摘要 |
The present invention includes an advanced MOSFET design and manufacturing approach that allow further increase in IC packing density by appropriately addressing the increased leakage problems associated with it. The MOSFET according to one embodiment of the present invention includes a gate, source/drain diffusion regions on opposite sides of the gate, and source/drain extensions adjacent the source/drain diffusion regions. The MOSFET also includes at least one added corner diffusion region that overlaps with at least a portion of a source/drain extension region for reducing off-state leakage currents. The corner diffusions can be created using conventional CMOS IC fabrication processes with some modification of an ion implant mask used in manufacturing a conventional CMOS IC.
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申请公布号 |
US6974998(B1) |
申请公布日期 |
2005.12.13 |
申请号 |
US20020247218 |
申请日期 |
2002.09.19 |
申请人 |
ALTERA CORPORATION |
发明人 |
LIU YOWJUANG (BILL);GREGOIRE FRANCOIS |
分类号 |
H01L21/265;H01L21/336;H01L29/76;H01L29/78;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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