| 发明名称 |
Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates |
| 摘要 |
Semiconductor devices having improved isolation are provided along with methods of fabricating such semiconductor devices. The improved isolation includes an encapsulated spacer formed within a gate region of a device.
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| 申请公布号 |
US6974743(B2) |
申请公布日期 |
2005.12.13 |
| 申请号 |
US20040770264 |
申请日期 |
2004.02.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIVAKARUNI RAMAC;KUDELKA STEPHAN;MANDELMAN JACK |
| 分类号 |
H01L21/28;H01L21/336;H01L21/8242;H01L29/06;H01L29/423;H01L29/737;H01L29/78;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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