发明名称 Solid-state imaging device, method for driving solid-state imaging device, and method for processing image signal
摘要 A solid-state imaging device comprising: a semiconductor substrate having a first surface; and a plurality of light-receiving sections arranged in an array pattern on the first surface of the semiconductor substrate, the solid-state imaging device reading a stored electric charge in each of the light-receiving sections, wherein each of the light-receiving sections comprises: a first signal electric charge storage section that stores a first signal electric charge corresponding to an incident light energy; and a second signal electric charge storage section that stores at least part of an excessive electric charge, the at least part of the excessive electric charge being captured from the first signal electric charge storage section, when the electric charge stored in the first signal electric charge storage section exceeds a saturated electric charge amount of the first signal electric charge section to form the excessive electric charge.
申请公布号 US6974975(B2) 申请公布日期 2005.12.13
申请号 US20040834250 申请日期 2004.04.29
申请人 FUJI PHOTO FILM CO., LTD. 发明人 SHIZUKUISHI MAKOTO
分类号 H01L27/148;H01L29/768;H04N5/335;H04N5/355;H04N5/369;H04N5/372;(IPC1-7):H01L33/00 主分类号 H01L27/148
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