发明名称 Analysis method for semiconductor device, analysis system and a computer program product
摘要 An analysis method for a semiconductor device includes measuring electrical characteristics of TEGs fabricated on a semiconductor substrate; classifying the TEGs into a first TEG category where a systematic failure has not occurred and a second TEG category where the systematic failure has occurred based on the electrical characteristics; creating a first comparison Mahalanobis reference space using first parameters of the TEGs in the first TEG category from among parameters of the TEGs expressed as numerical values; calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the TEGs in the second TEG category by using the first comparison Mahalanobis reference space; and comparing the first and second comparison Mahalanobis distances.
申请公布号 US6975953(B2) 申请公布日期 2005.12.13
申请号 US20040784939 申请日期 2004.02.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KADOTA KENICHI
分类号 G01R31/00;G06F11/30;G11C7/00;H01L21/66;H01L23/544;(IPC1-7):G01R31/00 主分类号 G01R31/00
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