| 发明名称 |
Self-aligned mask to reduce cell layout area |
| 摘要 |
Self-aligning vias and trenches etched between adjacent lines of metallization allows the area of the dielectric substrate allocated to the via or trench to be significantly reduced without increasing the possibility of electrical shorts to the adjacent lines of metallization.
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| 申请公布号 |
US6974770(B2) |
申请公布日期 |
2005.12.13 |
| 申请号 |
US20030600034 |
申请日期 |
2003.06.20 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COSTRINI GREGORY;LOW KIA-SENG;RATH DAVID L.;GAIDIS MICHAEL C.;GLASHAUSER WALTER |
| 分类号 |
H01L21/60;(IPC1-7):H01L21/476;H01L21/311 |
主分类号 |
H01L21/60 |
| 代理机构 |
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