| 摘要 |
In a manufacturing method of a hybrid integrated circuit device of the invention, transfer molding is carried put by positioning a curved surface formed in a back surface of the substrate on a lower mold die side and a burr formed in a main surface of the substrate on an upper mold die side. This utilizes the curved surface to inject thermosetting resin in an arrow direction to pour the thermosetting resin through a below of the substrate. There are no broken fragments of burr in a thermosetting resin at the below of the substrate. As a result, a required minimum resin thickness is secured at the below of the substrate, thus realizing a hybrid integrated circuit device having a high voltage resistance, an excellent heat dissipation property and a high product quality. |
