发明名称 |
Fabrication method of semiconductor integrated circuit device and testing method |
摘要 |
A method of fabricating a semiconductor integrated circuit device includes performing a wafer process to a plurality of wafers so as to form a plurality of semiconductor integrated circuit devices over each of the wafers, performing a first electrical test to a first set of wafers selected from the plurality of wafers formed in the wafer process and accommodated in a first wafer cassette placed in a wafer prober, and performing a second electrical test to a second set of wafers selected from the plurality of wafers formed in the wafer process and accommodated in a second wafer cassette placed in the wafer prober by automatically changing a test object to the second set of wafers.
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申请公布号 |
US6974710(B2) |
申请公布日期 |
2005.12.13 |
申请号 |
US20030670352 |
申请日期 |
2003.09.26 |
申请人 |
HITACHI HOKKAI SEMICONDUCTOR, LTD. |
发明人 |
TAIRA TOMOHIRO |
分类号 |
G01R31/26;G01R31/28;H01L21/66;(IPC1-7):G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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