| 摘要 |
FIELD: data carriers for analog information. ^ SUBSTANCE: working layer of device is made of iron-nickel alloy, containing analog information portions, positioned along information track, information track having information portions in form of serially connected elementary sources of electrostatic fields of dispersion of voltage with varying value and directions, formed due to contact difference of potentials at limit of information portions boundary, having crystalline structure with alternating phase composition. ^ EFFECT: analog information carrier allows multiple rewriting of information and can preserve information when working layer is under effect from electromagnetic fields and temperatures. ^ 2 dwg |
