发明名称 PHOTODIODE ARRAY AND PRODUCTION METHOD THEREOF, AND RADIATION DETECTOR
摘要 <p>A photodiode array (1) is provided with an n-type silicon substrate (3). A plurality of photodiodes (4) are formed in an array form on the surface opposite to the surface, onto which a light (L) to be detected enters, of the n-type silicon substrate (3). Spacers(6), each having a specified height, are provided in an area that does not correspond to a photodiode (4)-formed area on the light-to- be-detected (L)-incident surface of the n-type silicon substrate (3).</p>
申请公布号 KR20050116157(A) 申请公布日期 2005.12.09
申请号 KR20057018243 申请日期 2005.09.27
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SHIBAYAMA KATSUMI
分类号 G01T1/20;H01L27/14;H01L27/144;H01L27/146;H01L31/0232;H01L31/09;H04N5/32;H04N5/335;H04N5/357;H04N5/369;(IPC1-7):H01L31/09 主分类号 G01T1/20
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