| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device with its dimensional controllability improved and manufacturing process simplified, and to provide a method for manufacturing the same. SOLUTION: In this nonvolatile semiconductor memory device, transistors other than the memory cell transistor are the same in terms of gate structure as the memory cell transistor having a laminated gate structure. The gate structure comprises a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first conductor film formed on the first insulating film, a second insulating film formed on the first conductor film and provided with an opening, a spacer formed on the second insulating film for defining the opening, and a second conductor film formed on the spacer and electrically connected to the first conductor film through the opening. COPYRIGHT: (C)2006,JPO&NCIPI
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