PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress stress migration while suppressing deterioration in yield of via resistor and to eliminate void. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming an insulation film on a lower layer wiring (S126-S138), a step for forming a hole penetrating the insulation film down to the lower layer wiring (S140), a step for removing the exposed lower layer wiring down to the depth of 10 nm or more (S142), a step for forming a barrier metal film on the side face of the hole and the entire exposed surface of the lower layer wiring (S144), and a step for depositing a conductive material for connection with an upper layer wiring in the hole and the space of the lower layer wiring formed by removal where the barrier metal film is formed on the surface (S146-S148). COPYRIGHT: (C)2006,JPO&NCIPI