| 摘要 |
PROBLEM TO BE SOLVED: To improve the sensitivity of a photoelectric conversion device by separately producing a salicide process and a non-salicide process in the manufacturing process of an image sensor. SOLUTION: As an insulation film provided on the photodiode of a silicone substrate 1, an insulation film of four layer structure consists of an SiO<SB>2</SB>film M1, an SiO<SB>2</SB>film M2, a low voltage CVD-SiN film M3 and a plasma CVD-SiN film M4, or an insulation film of two layer structure consists of an SiO<SB>2</SB>film and a plasma CVD-SiN film. At the side wall of the gate part of an MOS transistor, a low reflection film consisting of insulation films M2, M3 and 9 of a three-layer structure using a part of the insulation film in common is realized when the insulation film has the 4 layer structure. Thus, improvement of a transistor characteristic is compatible with the improvement of the sensitivity of the photodiode. COPYRIGHT: (C)2006,JPO&NCIPI
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